| Contact Lithography | Minimum feature size: 1 μm; overlay accuracy: ±0.5 μm |
| Stepper Lithography | Projection ratio 1:5; minimum feature size: 0.35 μm; overlay accuracy ≤0.15 μm (X, Y); exposure field <22 × 22 mm |
| Electron-Beam Lithography | Minimum feature size: 10 nm; overlay accuracy: 40 nm; exposure range: <100 mm diameter |