Doping introduces a controlled amount and type of impurities into silicon to obtain a precise impurity distribution. It is used to modify wafer electrical properties and form vertical device and circuit structures. Common approaches include diffusion and ion implantation. High-temperature diffusion drives impurities through the silicon crystal structure, while ion implantation injects impurities into a silicon wafer through high-energy ion bombardment and atomic-level collisions. Semicon Global Tech supports ion implantation, diffusion, annealing and related semiconductor doping processes.