Etching Services | MEMS Dry and Wet Etching Solutions

Etching

Etching Overview

Etching is the selective removal of unwanted material from the surface of a wafer by chemical or physical methods. It includes material removal by solutions, reactive ions and other mechanical or plasma-based approaches. Etching technologies are mainly divided into dry etching and wet etching. Dry etching uses reactive gases and plasma, while wet etching relies on chemical reactions between etchants and the target material. Semicon Global Tech provides MEMS foundry services and supports multiple etching processes for research and development projects.

Etching Chemicals

Alkaline etchants	KOH, TMAH
Acidic etchants	HF, BOE, HCl, HNO₃, etc.

Etchable Materials

Silicon, silicon oxide, silicon nitride, metals, quartz and other MEMS or semiconductor materials.

Etching Capabilities

Ion Beam Etching (IBE)	For metals and other materials that are difficult to etch
Deep Reactive Ion Etching (DRIE)	Etching uniformity <±5%; selectivity >50:1
Reactive Ion Etching (RIE)	For etching Si, SiO₂, SiNₓ and related materials
Focused Ion Beam Etching (FIB)	Enables micro/nano processing such as etching, deposition and doping on materials and devices
Inductively Coupled Plasma (ICP) Etching	For etching GaN, GaAs, InP and other materials

Case Studies